| Manufacturer |
Infineon Technologies |
| Series |
HEXFET® |
| Operating Temperature |
-55°C ~ 175°C (TJ)
|
| Technology |
MOSFET (Metal Oxide)
|
| FET Type |
N-Channel |
| Drain to Source Voltage (Vdss) |
100 V |
| Current - Continuous Drain (Id) @ 25°C |
195A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
2.6mOhm @ 180A, 10V
|
| Vgs(th) (Max) @ Id |
4V @ 250µA
|
| Gate Charge (Qg) (Max) @ Vgs |
540 nC @ 10 V
|
| Vgs (Max) |
±20V
|
| Input Capacitance (Ciss) (Max) @ Vds |
19860 pF @ 50 V
|
| Power Dissipation (Max) |
520W (Tc)
|
| Mounting Type |
Through Hole |
